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By Helen Zhang, M. Han, X. J. Zhao

ISBN-10: 3038352152

ISBN-13: 9783038352150

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Extra resources for Advanced Research on Material Engineering, Electrical Engineering and Applied Technology II

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1B) (10% w/w) by photoirradiation, respectively. Upon irradiation with 297 nm light, the color of the solution turned red, in which the absorption maximum was observed at 538 nm. Reversely, the red solution turned colorless by irradiation with visible light (λ > 500 nm), indicating that 1c returned to the initial state 1o and a clear isosbestic point was observed at 259 nm. The significant difference in absorption bands of the closed-ring isomer compared to its open-ring isomer is mainly due to the increase in π conjugation, which dramatically changes the electronic structure as a whole in such a way that new electronic transitions are observed in the visible region [11,12].

The slope of every line in Figs. 2(A) and 2(B) represents the reaction rate constant (k) of diarylethene 1o in hexane. 80 s-1 in solution, respectively. As shown in Fig. 2(B), during the cycloreversion of 1c, the relationship between –log(Abs) and exposal time also behave perfect linearity, indicating that the cycloreversion process belong to the first order reaction. Advanced Materials Research Vol. 1003 29 Fluorescence of diarylethene 1o. Fig. 0 nm, respectively. 0 × 10-5 mol L-1, the relative fluorescence intensity increased remarkably, but when the concentration increased enough high, the fluorescence intensity decreased rapidly.

Reversely, the red solution turned colorless by irradiation with visible light (λ > 500 nm), indicating that 1c returned to the initial state 1o and a clear isosbestic point was observed at 259 nm. The significant difference in absorption bands of the closed-ring isomer compared to its open-ring isomer is mainly due to the increase in π conjugation, which dramatically changes the electronic structure as a whole in such a way that new electronic transitions are observed in the visible region [11,12].

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Advanced Research on Material Engineering, Electrical Engineering and Applied Technology II by Helen Zhang, M. Han, X. J. Zhao


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